PART |
Description |
Maker |
HYMD232M646DP8-D43 HYMD232M646DP8-H HYMD232M646DP8 |
200pin Unbuffered DDR SDRAM SO-DIMMs based on 256Mb D ver. (TSOP)
|
Hynix Semiconductor
|
M470L3224BT0 M470L3224BTO |
32Mx64 200pin DDR SDRAM SODIMM based on 32Mx8 Data Sheet 256MB DDR SDRAM MODULE
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3 256Mb (32M x 8) PC133 3-3-3 256Mb (32M x 8) PC100 2-2-2 56Mb的(32M的8)PC100-2-2 x16 SDRAM x16内存
|
Toshiba, Corp. SIEMENS AG
|
KBE00G003M-D411 KBE00G003M-D4110 |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2 SPECIALTY MEMORY CIRCUIT, PBGA107
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K5D5657DCM-F015 K5D5657DCM-F0CL |
MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
SAMSUNG[Samsung semiconductor] Samsung Electronics
|
HYS72D256020GR-8-A HYS72D256020GR-7-A HYS72D128020 |
2GB (256Mx72) PC1600 2-bank available 3Q02 2GB (256Mx72) PC2100 2-bank available 3Q02 128M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 DIMM-184
|
Infineon Technologies AG
|
TS2GJF220 |
2GB USB2.0 JetFlash垄芒220 2GB USB2.0 JetFlash?20
|
Transcend Information. Inc.
|
W3EG6433S-JD3 W3EG6433S265D3 |
256MB - 2x16Mx64 DDR SDRAM UNBUFFERED 256MB 2x16Mx64 DDR内存缓冲
|
Electronic Theatre Controls, Inc.
|
M470T2864FB3 |
200pin Unbuffered SODIMM
|
Samsung semiconductor
|
M470L1713BT0 |
16Mx64 200pin DDR SDRAM SODIMM based on 16Mx8 Data Sheet
|
Samsung Electronic
|
HYB39S256400D HYB39S256400DTL-6 HYB39S256400DTL-7 |
256 MBit Synchronous DRAM SDRAM Components - 256Mb (16Mx16) FBGA PC133 2-2-2 SDRAM Components - 256Mb (32Mx8) PC133 2-2-2 SDRAM Components - 256Mb (32Mx8) FBGA PC133 2-2-2 SDRAM Components - 256Mb (16Mx16) PC133 2-2-2 SDRAM Components - 256Mb (64Mx4) FBGA PC133 2-2-2 256-MBit Synchronous DRAM
|
INFINEON[Infineon Technologies AG]
|